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|Title:||Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing|
|Source:||Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F. (2006). Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing. Applied Physics Letters 89 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2364834|
|Abstract:||Pileup of boron atoms near the maximum melt depth in bulk silicon and silicon-on-insulator (SOI) substrates upon laser annealing (LA) was studied. The results show that boron atoms accumulate near the maximum melt depth in shallow melting and increases with increasing laser pulses. The pileup is found to be related to the recrystallization behavior of the melted silicon during LA and occurs at a recrystallization transient, RT0, of about 10 nm from the maximum melt depth in both SOI and bulk silicon substrates. An abrupt recrystallization process in preamorphized silicon, on the other hand, suppresses the formation of the boron pileup during LA. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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