Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.45.11120
Title: Diffusion of a Si atom on the Si(001)-2×1 surface: A Monte Carlo study
Authors: Toh, C.P.
Ong, C.K. 
Issue Date: 1992
Citation: Toh, C.P., Ong, C.K. (1992). Diffusion of a Si atom on the Si(001)-2×1 surface: A Monte Carlo study. Physical Review B 45 (19) : 11120-11125. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.45.11120
Abstract: We use a modified form of the Stillinger-Weber potential to obtain the adsorption sites of a silicon atom on the fully relaxed Si(001)-2×1 surface. The barriers between sites are also found and these are used to estimate the rates of hopping from site to site. We conclude that the direction of easy diffusion is parallel and to the side of the dimer rows. The effective activation energy for the resultant quasi-one-dimensional motion (0.33 eV) is compared with recent experimental estimates. Our results also explain the appearance of regular island growth at high temperature as well as low-temperature diluted-dimer growth. © 1992 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/96225
ISSN: 01631829
DOI: 10.1103/PhysRevB.45.11120
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

29
checked on Oct 16, 2018

WEB OF SCIENCETM
Citations

23
checked on Oct 16, 2018

Page view(s)

33
checked on Oct 5, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.