Please use this identifier to cite or link to this item: https://doi.org/10.1023/A:1013088624226
Title: Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
Authors: Latt, K.M.
Lee, Y.K.
Seng, H.L. 
Osipowicz, T. 
Issue Date: 15-Dec-2001
Citation: Latt, K.M., Lee, Y.K., Seng, H.L., Osipowicz, T. (2001-12-15). Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide. Journal of Materials Science 36 (24) : 5845-5851. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1013088624226
Abstract: Tantalum nitride thin films with different thickness are sputtered deposited on silicon dioxide in the Cu/TaN/SiO2/Si multiplayer structure. Using resistivity analyses, X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectroscopy, this work examines the impact of varying layer thickness on the crystal structure, resistivity, intermixing and reactions at the interfaces before and after annealing. The thinner the film thickness of TaN, the severe the reactions at the interface of Cu/TaN and consumed more conductive Cu. All the structures shown similar degradation process, and were found to be stable up to 500°C for 35 min. Accelerated grain growth and agglomeration were also observed after annealing temperature higher than 550°C at all Cu surfaces of the samples. © 2001 Kluwer Academic Publishers.
Source Title: Journal of Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96223
ISSN: 00222461
DOI: 10.1023/A:1013088624226
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