Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0953-8984/5/5/006
DC Field | Value | |
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dc.title | Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study | |
dc.contributor.author | Toh, C.P. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:20:57Z | |
dc.date.available | 2014-10-16T09:20:57Z | |
dc.date.issued | 1993 | |
dc.identifier.citation | Toh, C.P., Ong, C.K. (1993). Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study. Journal of Physics: Condensed Matter 5 (5) : 551-558. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/5/006 | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96222 | |
dc.description.abstract | The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0953-8984/5/5/006 | |
dc.description.sourcetitle | Journal of Physics: Condensed Matter | |
dc.description.volume | 5 | |
dc.description.issue | 5 | |
dc.description.page | 551-558 | |
dc.identifier.isiut | A1993KL07000006 | |
Appears in Collections: | Staff Publications |
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