Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/5/5/006
Title: Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study
Authors: Toh, C.P.
Ong, C.K. 
Issue Date: 1993
Source: Toh, C.P., Ong, C.K. (1993). Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study. Journal of Physics: Condensed Matter 5 (5) : 551-558. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/5/006
Abstract: The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths.
Source Title: Journal of Physics: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/96222
ISSN: 09538984
DOI: 10.1088/0953-8984/5/5/006
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