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|Title:||Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study|
|Citation:||Toh, C.P., Ong, C.K. (1993). Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study. Journal of Physics: Condensed Matter 5 (5) : 551-558. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/5/006|
|Abstract:||The authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths.|
|Source Title:||Journal of Physics: Condensed Matter|
|Appears in Collections:||Staff Publications|
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