1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96200
DC FieldValue
dc.titleDetermination of the conduction band discontinuity of a semiconductor n-N heterojunction
dc.contributor.authorKok, W.C.
dc.date.accessioned2014-10-16T09:20:42Z
dc.date.available2014-10-16T09:20:42Z
dc.date.issued1994-01-02
dc.identifier.citationKok, W.C. (1994-01-02). Determination of the conduction band discontinuity of a semiconductor n-N heterojunction. Applied Surface Science 75 (1-4) : 303-307. ScholarBank@NUS Repository.
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96200
dc.description.abstractA simple method is proposed from which the conduction band discontinuity energy ΔEC of a semiconductor heterojunction can be deduced. The method is applied to determine the conduction band discontinuities of various lattice-matched heterojunctions. The values of ΔEC so obtained for n-GaAs/N-A1yGa1-yAs heterojunctions with aluminium concentrations y = 0.3 and y = 0.4 and for c-Ge/GaAs, GaAs/ZnSe and c-Si/GaP heterojunctions are in reasonable agreement with those from other studies. © 1994.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleApplied Surface Science
dc.description.volume75
dc.description.issue1-4
dc.description.page303-307
dc.description.codenASUSE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.