Please use this identifier to cite or link to this item:
|Title:||Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometry|
|Citation:||Chanbasha, A.R., Wee, A.T.S. (2006-03). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (2) : 547-553. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2167986|
|Abstract:||Improvements in depth resolution using low primary ion energy secondary-ion-mass spectrometry have been demonstrated. This comprehensive study is done using a wide range of impact angles at ultralow energies. In this work, using Ge delta-doped Si samples, we confirm that depth resolution can be improved by lowering the primary ion impact energy at ultralow energy. By varying the angle of incidence from 0° to 70°, we noted that a better depth resolution is achievable not only at normal incidence but over a wider range of impact angles as the probe energy is reduced. The best depth resolution was observed using Ep ∼250 eV and θ∼0°-40° with full width at half maximum (FWHM) ∼1.5 nm and λd|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 23, 2018
WEB OF SCIENCETM
checked on May 8, 2018
checked on May 4, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.