Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2167986
Title: Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometry
Authors: Chanbasha, A.R.
Wee, A.T.S. 
Issue Date: Mar-2006
Citation: Chanbasha, A.R., Wee, A.T.S. (2006-03). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (2) : 547-553. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2167986
Abstract: Improvements in depth resolution using low primary ion energy secondary-ion-mass spectrometry have been demonstrated. This comprehensive study is done using a wide range of impact angles at ultralow energies. In this work, using Ge delta-doped Si samples, we confirm that depth resolution can be improved by lowering the primary ion impact energy at ultralow energy. By varying the angle of incidence from 0° to 70°, we noted that a better depth resolution is achievable not only at normal incidence but over a wider range of impact angles as the probe energy is reduced. The best depth resolution was observed using Ep ∼250 eV and θ∼0°-40° with full width at half maximum (FWHM) ∼1.5 nm and λd
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/96174
ISSN: 10711023
DOI: 10.1116/1.2167986
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