Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.81.033301
Title: Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet
Authors: Ki, D.-K.
Nam, S.-G.
Lee, H.-J.
Özyilmaz, B. 
Issue Date: 6-Jan-2010
Citation: Ki, D.-K., Nam, S.-G., Lee, H.-J., Özyilmaz, B. (2010-01-06). Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet. Physical Review B - Condensed Matter and Materials Physics 81 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.81.033301
Abstract: By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor (ν) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral direction dependent change in the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge-states in a bipolar graphene system. © 2010 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96169
ISSN: 10980121
DOI: 10.1103/PhysRevB.81.033301
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