Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.47.9346
Title: Defect processes in GaP: Implications for the behavior of excited surface defects
Authors: Khoo, G.S.
Ong, C.K. 
Issue Date: 1993
Citation: Khoo, G.S., Ong, C.K. (1993). Defect processes in GaP: Implications for the behavior of excited surface defects. Physical Review B 47 (15) : 9346-9349. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.9346
Abstract: We have investigated the different charge states and geometries of the P vacancy and Ga antisite defects in bulk GaP as well as on the GaP(110) surface. Similar behavior is observed for both the bulk and surface. The charged P vacancy VP+ exhibits symmetric outward relaxations from the vacancy site while VP0 and VP- display distortions that lower the symmetry. For the Ga antisite defect (GaP), the neutral GaP0 has a broken-bond configuration with one of its Ga nearest neighbors, while GaP- and GaP2- both have the centered configuration. However, due to their lack of symmetry, the atoms at the surface display a larger distortion. The effects of excitations initially lead to a more positive charge state of the surface defects and subsequently to bond weakening. © 1993 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/96157
ISSN: 01631829
DOI: 10.1103/PhysRevB.47.9346
Appears in Collections:Staff Publications

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