Please use this identifier to cite or link to this item:
|Title:||Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation|
|Citation:||Cai, Y., Bai, Z., Pan, H., Feng, Y.P., Yakobson, B.I., Zhang, Y.-W. (2014-02-07). Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation. Nanoscale 6 (3) : 1691-1697. ScholarBank@NUS Repository. https://doi.org/10.1039/c3nr05218d|
|Abstract:||Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, constructing a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of a MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or an interconnect without compromising the mechanical and structural integrity of the monolayer. © 2013 The Royal Society of Chemistry.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 16, 2018
WEB OF SCIENCETM
checked on Oct 8, 2018
checked on Sep 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.