Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3nr05218d
Title: Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation
Authors: Cai, Y.
Bai, Z.
Pan, H.
Feng, Y.P. 
Yakobson, B.I.
Zhang, Y.-W.
Issue Date: 7-Feb-2014
Citation: Cai, Y., Bai, Z., Pan, H., Feng, Y.P., Yakobson, B.I., Zhang, Y.-W. (2014-02-07). Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation. Nanoscale 6 (3) : 1691-1697. ScholarBank@NUS Repository. https://doi.org/10.1039/c3nr05218d
Abstract: Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, constructing a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of a MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or an interconnect without compromising the mechanical and structural integrity of the monolayer. © 2013 The Royal Society of Chemistry.
Source Title: Nanoscale
URI: http://scholarbank.nus.edu.sg/handle/10635/96070
ISSN: 20403364
DOI: 10.1039/c3nr05218d
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