Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn302422x
Title: Coherent atomic and electronic heterostructures of single-layer MoS 2
Authors: Eda, G. 
Fujita, T.
Yamaguchi, H.
Voiry, D.
Chen, M.
Chhowalla, M.
Keywords: 2D crystals
electron microscopy
heterostrucure
interface
MoS 2
Issue Date: 28-Aug-2012
Citation: Eda, G., Fujita, T., Yamaguchi, H., Voiry, D., Chen, M., Chhowalla, M. (2012-08-28). Coherent atomic and electronic heterostructures of single-layer MoS 2. ACS Nano 6 (8) : 7311-7317. ScholarBank@NUS Repository. https://doi.org/10.1021/nn302422x
Abstract: Nanoscale heterostructures with quantum dots, nanowires, and nanosheets have opened up new routes toward advanced functionalities and implementation of novel electronic and photonic devices in reduced dimensions. Coherent and passivated heterointerfaces between electronically dissimilar materials can be typically achieved through composition or doping modulation as in GaAs/AlGaAs and Si/NiSi or heteroepitaxy of lattice matched but chemically distinct compounds. Here we report that single layers of chemically exfoliated MoS 2 consist of electronically dissimilar polymorphs that are lattice matched such that they form chemically homogeneous atomic and electronic heterostructures. High resolution scanning transmission electron microscope (STEM) imaging reveals the coexistence of metallic and semiconducting phases within the chemically homogeneous two-dimensional (2D) MoS 2 nanosheets. These results suggest potential for exploiting molecular scale electronic device designs in atomically thin 2D layers. © 2012 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/96009
ISSN: 19360851
DOI: 10.1021/nn302422x
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