Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/95982
Title: Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes
Authors: Kang, Y.Q.
Zheng, J.H.
Tan, H.S. 
Ng, S.C. 
Issue Date: Jul-1996
Citation: Kang, Y.Q.,Zheng, J.H.,Tan, H.S.,Ng, S.C. (1996-07). Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes. Applied Physics A: Materials Science and Processing 63 (1) : 37-43. ScholarBank@NUS Repository.
Abstract: A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factor F(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values of F(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for the B centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections for A and B centres in GaAs reported by Lang [7] and Wang et al. [22] and for Cu centre in Ge reported by Zhdanova and Kalashnikov [23].
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/95982
ISSN: 09478396
Appears in Collections:Staff Publications

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