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|Title:||Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes|
|Citation:||Kang, Y.Q.,Zheng, J.H.,Tan, H.S.,Ng, S.C. (1996-07). Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes. Applied Physics A: Materials Science and Processing 63 (1) : 37-43. ScholarBank@NUS Repository.|
|Abstract:||A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factor F(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values of F(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for the B centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections for A and B centres in GaAs reported by Lang  and Wang et al.  and for Cu centre in Ge reported by Zhdanova and Kalashnikov .|
|Source Title:||Applied Physics A: Materials Science and Processing|
|Appears in Collections:||Staff Publications|
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