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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354778
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dc.titleCharge trapping on different cuts of a single-crystalline α-SiO 2
dc.contributor.authorGong, H.
dc.contributor.authorLe Gressus, C.
dc.contributor.authorOh, K.H.
dc.contributor.authorDing, X.Z.
dc.contributor.authorOng, C.K.
dc.contributor.authorTan, B.T.G.
dc.date.accessioned2014-10-16T09:18:02Z
dc.date.available2014-10-16T09:18:02Z
dc.date.issued1993
dc.identifier.citationGong, H., Le Gressus, C., Oh, K.H., Ding, X.Z., Ong, C.K., Tan, B.T.G. (1993). Charge trapping on different cuts of a single-crystalline α-SiO 2. Journal of Applied Physics 74 (3) : 1944-1948. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354778
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95977
dc.description.abstractA scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.354778
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.354778
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume74
dc.description.issue3
dc.description.page1944-1948
dc.identifier.isiutA1993LQ12700075
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