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|Title:||Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition|
|Authors:||Seng, H.L. |
Von Känel, H.
|Citation:||Seng, H.L., Breese, M.B.H., Watt, F., Kummer, M., Von Känel, H. (2004-01). Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 215 (1-2) : 235-239. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(03)01820-2|
|Abstract:||Thick, linearly graded-composition strained Si1-xGe x/Si layers were recently developed for proton beam bending and extraction experiments. Such unrelaxed layers which are many microns thick necessitate a low maximum germanium content. Here, graded Si 1-xGex epilayers, 5-20 μm thick with maximum Ge compositions of x=0.5-1.7%, grown by low energy plasma enhanced chemical vapour deposition were characterized using a recently developed mode of ion channeling analysis which is capable of quantifying the small lattice rotations along off-normal planar directions. High-quality 10 μm Si1-xGe x epilayers with bend angles along off-normal directions which agree very well with those of fully strained layers are successfully grown. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
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