Please use this identifier to cite or link to this item:
|Title:||Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition|
|Authors:||Seng, H.L. |
Von Känel, H.
|Citation:||Seng, H.L., Breese, M.B.H., Watt, F., Kummer, M., Von Känel, H. (2004-01). Characterization of thick graded Si1-xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 215 (1-2) : 235-239. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(03)01820-2|
|Abstract:||Thick, linearly graded-composition strained Si1-xGe x/Si layers were recently developed for proton beam bending and extraction experiments. Such unrelaxed layers which are many microns thick necessitate a low maximum germanium content. Here, graded Si 1-xGex epilayers, 5-20 μm thick with maximum Ge compositions of x=0.5-1.7%, grown by low energy plasma enhanced chemical vapour deposition were characterized using a recently developed mode of ion channeling analysis which is capable of quantifying the small lattice rotations along off-normal planar directions. High-quality 10 μm Si1-xGe x epilayers with bend angles along off-normal directions which agree very well with those of fully strained layers are successfully grown. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jul 4, 2018
checked on Jun 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.