Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/95967
Title: Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer
Authors: Taijing, Lu 
Ng, S.C. 
Issue Date: Oct-1994
Citation: Taijing, Lu,Ng, S.C. (1994-10). Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. Journal of Materials Research 9 (10) : 2712-2716. ScholarBank@NUS Repository.
Abstract: Swirls and oxidation stacking faults (OSF) ring-bands in the near surface region of Si crystals have been detected and characterized by a 180° backscattering Rayleigh-Brillouin spectrometer using an argon-ion laser as its light source. In FZ Si wafers with swirls, the central region exhibits high scattered light with random undulation, the peripheral region with swirls shows a periodic undulation of scattered light intensity, while the region in-between is a nearly uniform zone of low scattered light intensity. In contrast to this, the CZ Si wafers with OSF ring-bands display a low uniformly scattered light background with a high undulated scattered light zone corresponding to the OSF ring-band. The scattered light intensity and its structure in the OSF ring-band vary with the heat-treatment conditions. The features of scattered light detected by the scattering spectrometer are discussed.
Source Title: Journal of Materials Research
URI: http://scholarbank.nus.edu.sg/handle/10635/95967
ISSN: 08842914
Appears in Collections:Staff Publications

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