Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00340-005-2079-8
Title: Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films
Authors: Elim, H.I. 
Ji, W. 
Zhu, F.
Issue Date: Mar-2006
Citation: Elim, H.I., Ji, W., Zhu, F. (2006-03). Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films. Applied Physics B: Lasers and Optics 82 (3) : 439-442. ScholarBank@NUS Repository. https://doi.org/10.1007/s00340-005-2079-8
Abstract: Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.
Source Title: Applied Physics B: Lasers and Optics
URI: http://scholarbank.nus.edu.sg/handle/10635/95928
ISSN: 09462171
DOI: 10.1007/s00340-005-2079-8
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