Please use this identifier to cite or link to this item:
|Title:||Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films|
|Authors:||Elim, H.I. |
|Citation:||Elim, H.I., Ji, W., Zhu, F. (2006-03). Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films. Applied Physics B: Lasers and Optics 82 (3) : 439-442. ScholarBank@NUS Repository. https://doi.org/10.1007/s00340-005-2079-8|
|Abstract:||Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.|
|Source Title:||Applied Physics B: Lasers and Optics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2019
WEB OF SCIENCETM
checked on Feb 6, 2019
checked on Jan 25, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.