Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/11/23/309
Title: Boundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells
Authors: Guo, Q.
Feng, Y.P. 
Poon, H.C. 
Ong, C.K. 
Issue Date: 14-Jun-1999
Source: Guo, Q., Feng, Y.P., Poon, H.C., Ong, C.K. (1999-06-14). Boundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells. Journal of Physics Condensed Matter 11 (23) : 4557-4574. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/11/23/309
Abstract: An alternative approach based on the invariant imbedding method and the random phase approximation is used to study the excitation spectra of both neutral and parabolic quantum wells. Compared to other methods, this approach is efficient and leads to more stable solutions. It also provides a convenient way for studying boundary effects. The calculated excitation spectra for both types of quantum well agree well with experimental observations and previous calculations. The effects of the boundary condition on the excitation spectra were extensively studied. It was found that the positions and relative strengths of resonant peaks are sensitive to the boundary condition. The evolution of some of the resonant peaks can be attributed to the coupling between collective plasma modes and the intersubband transitions.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/95886
ISSN: 09538984
DOI: 10.1088/0953-8984/11/23/309
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