Please use this identifier to cite or link to this item:
|Title:||Boron nitride and carbon double-wall hetero-nanotubes: First-principles calculation of electronic properties|
|Authors:||Pan, H. |
|Citation:||Pan, H., Feng, Y.P., Lin, J. (2008-02-05). Boron nitride and carbon double-wall hetero-nanotubes: First-principles calculation of electronic properties. Nanotechnology 19 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/19/9/095707|
|Abstract:||First-principles calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the electronic properties of boron nitride and carbon double-wall hetero-nanotubes of different chirality and size. The results show that the electronic structures of the double-wall hetero-nanotubes near the Fermi level are dominated by the p electrons of carbon atoms, regardless of whether the carbon nanotube is inside or outside the boron nitride nanotube. Double-wall hetero-nanotubes consisting of semiconducting carbon and boron nitride nanotubes are semiconductors. An opening of a band gap is observed for armchair carbon and boron nitride double-wall hetero-nanotubes with small intertube spacing due to the intertube interaction and the changes of symmetry. © IOP Publishing Ltd.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 19, 2018
WEB OF SCIENCETM
checked on Jul 11, 2018
checked on Jul 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.