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|Title:||BEEM studies on metal high K-dielectric HfO2 interfaces|
|Authors:||Zheng, Y. |
|Citation:||Zheng, Y., Troadec, C., Wee, A.T.S., Pey, K.L., O'Shea, S.J., Chandrasekhar, N. (2007-04-01). BEEM studies on metal high K-dielectric HfO2 interfaces. Journal of Physics: Conference Series 61 (1) : 1347-1351. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/61/1/266|
|Abstract:||In this work, we present an investigation of the Pt and Pd-HfO 2-p-Si interfaces using ballistic electron emission microscopy. The band alignment of the Pt-HfO2-p-Si structure is inferred. The potential drop in the oxide has been determined. Oscillations in the collector current with increasing bias enable estimation of the effective mass of electrons in HfO2 in the range of 0.35-0.44 m0. Stressing studies indicate modest resistance to stressing, with a threshold of 0.5 nC for damage to the base/oxide. Our work is the first successful application of the BEEM technique to metal-high K dielectric interfaces. © 2007 IOP Publishing Ltd.|
|Source Title:||Journal of Physics: Conference Series|
|Appears in Collections:||Staff Publications|
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