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|Title:||Anomalous temperature behavior of Raman spectra from visible light emitting porous silicon|
|Authors:||Feng, Z.C. |
|Citation:||Feng, Z.C.,Payne, J.R.,Covington, B.C. (1993-07). Anomalous temperature behavior of Raman spectra from visible light emitting porous silicon. Solid State Communications 87 (2) : 131-134. ScholarBank@NUS Repository.|
|Abstract:||We performed a Raman scattering study on porous Si which exhibited red light emission. Porous Si membranes (100-200 μm) were formed by anodic dissolution (current density = 70-100 mA/cm2) of (111) oriented, heavy boron doped, p-type Si wafers. The membranes display red light when illuminated with white or flash light. They possess a major Raman line with the wavenumber position near, but slightly lower than that of crystalline (c-) Si. This line width is broader than that of c-Si, and narrower than, or comparable with, that of micro-crystalline (μc-) Si. Its temperature behavior is quite different from that of c- and μc-Si. The Raman line from our porous Si shifts down in wavenumber and broadens with a decrease of temperature from 300 to 80 K, which is characteristic of the soft-mode nature, and is opposite to that of c-Si and μc-Si. Three possible mechanisms responsible for this anomalous temperature behavior of the Raman spectra from porous Si are discussed qualitatively. © 1993.|
|Source Title:||Solid State Communications|
|Appears in Collections:||Staff Publications|
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