Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2003.08.040
Title: Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
Authors: Mangelinck, D.
Lee, P.S.
Osipowitcz, T. 
Pey, K.L.
Keywords: Characterization
MOS
Rutherford backscattering spectrometry
Silicide
Sub-micron devices
Issue Date: Feb-2004
Citation: Mangelinck, D., Lee, P.S., Osipowitcz, T., Pey, K.L. (2004-02). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 215 (3-4) : 495-500. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2003.08.040
Abstract: A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. © 2003 Elsevier B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/95774
ISSN: 0168583X
DOI: 10.1016/j.nimb.2003.08.040
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