Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.nimb.2003.08.040
| Title: | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry | Authors: | Mangelinck, D. Lee, P.S. Osipowitcz, T. Pey, K.L. |
Keywords: | Characterization MOS Rutherford backscattering spectrometry Silicide Sub-micron devices |
Issue Date: | Feb-2004 | Citation: | Mangelinck, D., Lee, P.S., Osipowitcz, T., Pey, K.L. (2004-02). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 215 (3-4) : 495-500. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2003.08.040 | Abstract: | A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. © 2003 Elsevier B.V. All rights reserved. | Source Title: | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | URI: | http://scholarbank.nus.edu.sg/handle/10635/95774 | ISSN: | 0168583X | DOI: | 10.1016/j.nimb.2003.08.040 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.