Please use this identifier to cite or link to this item:
|Title:||An innovative way of etching MoS2: Characterization and mechanistic investigation|
Castro Neto, A.H.
|Source:||Huang, Y., Wu, J., Xu, X., Ho, Y., Ni, G., Zou, Q., Koon, G.K.W., Zhao, W., Castro Neto, A.H., Eda, G., Shen, C., Özyilmaz, B. (2013). An innovative way of etching MoS2: Characterization and mechanistic investigation. Nano Research 6 (3) : 200-207. ScholarBank@NUS Repository. https://doi.org/10.1007/s12274-013-0296-8|
|Abstract:||We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals. Graphical abstract: [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.|
|Source Title:||Nano Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
WEB OF SCIENCETM
checked on Jan 24, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.