Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2203637
Title: Alternating phase shifted scattering bars for low k1 trench pattering
Authors: Mehta, S.S.
Kumar, R.
Singh, N.
Suda, H.
Kubota, T.
Kimura, Y.
Kinoshita, H.
Wong, T.K.S.
Wei, J. 
Issue Date: May-2006
Citation: Mehta, S.S., Kumar, R., Singh, N., Suda, H., Kubota, T., Kimura, Y., Kinoshita, H., Wong, T.K.S., Wei, J. (2006-05). Alternating phase shifted scattering bars for low k1 trench pattering. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (3) : 1464-1469. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2203637
Abstract: This article studies the resolution enhancement for sub- 120 nm isolated trench patterns using alternating phase shifted scattering bars. Through simulation, we found that three sets of 40 nm alternating phase shifted scattering bars with separation of 120 nm are the best aerial image provider in terms of higher peak intensity, lower side lobe intensity, and smaller full width of half maxima. Simulation results are verified experimentally, and we achieved isolated trench at patterned critical dimension (CD) target of 120 nm±10% with manufacturability process window for nominal design CD of 125 nm. The patterned CD target 120 nm corresponds to k1 factor of 0.33 for exposing wavelength of 248 nm, sigma of 0.31, and maximum numerical aperture (NA) of 0.68. Three sets of alternating phase shifted scattering bars showed good mask linearity up to 115 nm nominal design CD. We compared isolated trench process condition with dense patterns. Our experimental results show that both isolated and dense patterns can be printed at the same process condition. © 2006 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/95745
ISSN: 10711023
DOI: 10.1116/1.2203637
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