Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3663386
Title: A universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries
Authors: Chen, J.
Zhang, G.
Li, B. 
Issue Date: 28-Nov-2011
Citation: Chen, J., Zhang, G., Li, B. (2011-11-28). A universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries. Journal of Chemical Physics 135 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3663386
Abstract: By using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of surface-to-volume ratio (SVR). More interestingly, a simple universal linear dependence of thermal conductivity on SVR is observed for SiNWs with modest cross sectional area (larger than 20 nm2), regardless of the cross sectional geometry. As a result, among different shaped SiNWs with the same cross sectional area, the one with triangular cross section has the lowest thermal conductivity. Our study provides not only a universal gauge for thermal conductivity among different cross sectional geometries, but also a designing guidance to tune thermal conductivity by geometry. © 2011 American Institute of Physics.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/95701
ISSN: 00219606
DOI: 10.1063/1.3663386
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