Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/95693
Title: A surface and interface study on the InSb/GaAs heterostructures
Authors: Li, K.
Wee, A.T.S. 
Lin, J. 
Lee, K.K.
Watt, F. 
Tan, K.L. 
Feng, Z.C.
Webb, J.B.
Keywords: Auger electron spectroscopy (aes)
Indium antimonide
Rutherford backscattering spectroscopy
X-ray diffraction
Issue Date: 20-Jun-1997
Citation: Li, K.,Wee, A.T.S.,Lin, J.,Lee, K.K.,Watt, F.,Tan, K.L.,Feng, Z.C.,Webb, J.B. (1997-06-20). A surface and interface study on the InSb/GaAs heterostructures. Thin Solid Films 302 (1-2) : 111-115. ScholarBank@NUS Repository.
Abstract: This paper reports a surface and interface study of indium antimonide epitaxially grown on gallium arsenide using metalorganic magnetron sputtering technique. X-ray photoelectron spectroscopy analysis shows that the original surface of InSb is composed of InSb, In2O3, and Sb2O3, and the binding energy of Sb 3d5/2 decreases when an antimony atom is surrounded by more indium atoms. The interdiffusion phenomenon is studied by both Auger electron spectroscopy depth profiling and Rutherford backscattering spectroscopy, the results of which are in good agreement. The width of the interdiffusion region is around 900 ± 100 Å, and independent of epilayer thickness. X-ray diffraction study indicates that the crystallinity of the InSb epilayer becomes better with the increase of epilayer thickness. It is also demonstrated that the crystal orientation relationship between the InSb epilayer and GaAs substrate is (100) InSb/ /(100) GaAs, and the (100) crystal planes of InSb and GaAs are parallel to the macro-surface of the InSb/GaAs heterostructure. © 1997 Elsevier Science S.A.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/95693
ISSN: 00406090
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

63
checked on Dec 7, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.