Please use this identifier to cite or link to this item: https://doi.org/10.1039/b911911f
Title: π-Conjugated oligothiophene-anthracene co-oligomers: Synthesis, physical properties, and self-assembly
Authors: Luo, J. 
Qu, H.
Yin, J. 
Zhang, X. 
Huang, K.-W. 
Chi, C. 
Issue Date: 2009
Citation: Luo, J., Qu, H., Yin, J., Zhang, X., Huang, K.-W., Chi, C. (2009). π-Conjugated oligothiophene-anthracene co-oligomers: Synthesis, physical properties, and self-assembly. Journal of Materials Chemistry 19 (43) : 8202-8211. ScholarBank@NUS Repository. https://doi.org/10.1039/b911911f
Abstract: A new class of oligothiophene-anthracene co-oligomers, 9,10-bis(2- dodecyloligothienylvinyl)anthracene TnA (n = 1, 2 and 3), were synthesized and characterized. The photophysical and electrochemical properties of these oligomers demonstrated an increased conjugation length with increasing number of thiophene units. These oligomers also exhibited relatively larger ionization potential values compared with pentacene and sexithiophene and thus are expected to show improved stability. The strong aggregation tendency and excimer formation for T1A and obvious aggregation effect for T 2A in solution were observed from the concentration and temperature-dependent fluorescence spectra. In contrast, no obvious aggregation behavior could be observed for T3A in solution. Thermal behavior and self-assembly of these co-oligomers in solid state were studied by a combination of TGA, DSC, powder X-ray diffraction and polarizing optical microscope. Liquid crystalline phases were observed in T2A and T3A at elevated temperature while only a crystalline phase was found for T 1A. Single-crystal structures of T1A and T2A revealed a lamellar packing mode with ordered intermolecular anthracene-to-anthracene and oligothiophene-to-oligothiophene π-π stacking and these qualify them as potential semiconductors in electronic devices. © 2009 The Royal Society of Chemistry.
Source Title: Journal of Materials Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/95433
ISSN: 09599428
DOI: 10.1039/b911911f
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