Please use this identifier to cite or link to this item: https://doi.org/10.1002/smll.201100426
Title: Wrapping graphene sheets around organic wires for making memory devices
Authors: Wang, S. 
Manga, K.K. 
Zhao, M.
Bao, Q. 
Loh, K.P. 
Keywords: encapsulation
graphene
memory devices
nanowires
organic-inorganic hybrids
Issue Date: 22-Aug-2011
Source: Wang, S., Manga, K.K., Zhao, M., Bao, Q., Loh, K.P. (2011-08-22). Wrapping graphene sheets around organic wires for making memory devices. Small 7 (16) : 2372-2378. ScholarBank@NUS Repository. https://doi.org/10.1002/smll.201100426
Abstract: Hybrids of organic semiconductors and graphene can generate a whole new class of materials with enhanced properties. A simple solution-phase route to synthesize a hybrid material made of organic nanowires and graphene oxide (GO) sheets is demonstrated by sonicating tetracene molecules and GO together in diluted fuming nitric acid. The self-assembled tetracene-derived organic wires become encapsulated by GO sheets during the reaction to produce an interconnected, one-dimensional/two-dimensional lamellar film. Memory devices fabricated using the hybrid film as the sandwiched layer between aluminum electrodes exhibit excellent electrical bistability. The charge retention properties are attributed to charge transfer and a charge-trapping/detrapping mechanism operational at the interfaces and isolated matrices of the GO-tetracene hybrid. A simple method to synthesize hybrid materials containing 1D organic wires and 2D graphene oxide (GO) consists of sonicating tetracene and GO together in diluted fuming HNO 3. The GO-organic wire hybrids are used to fabricate memory devices that exhibit electrical bistability. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Small
URI: http://scholarbank.nus.edu.sg/handle/10635/95414
ISSN: 16136810
DOI: 10.1002/smll.201100426
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