Please use this identifier to cite or link to this item:
|Title:||Wrapping graphene sheets around organic wires for making memory devices|
|Authors:||Wang, S. |
|Citation:||Wang, S., Manga, K.K., Zhao, M., Bao, Q., Loh, K.P. (2011-08-22). Wrapping graphene sheets around organic wires for making memory devices. Small 7 (16) : 2372-2378. ScholarBank@NUS Repository. https://doi.org/10.1002/smll.201100426|
|Abstract:||Hybrids of organic semiconductors and graphene can generate a whole new class of materials with enhanced properties. A simple solution-phase route to synthesize a hybrid material made of organic nanowires and graphene oxide (GO) sheets is demonstrated by sonicating tetracene molecules and GO together in diluted fuming nitric acid. The self-assembled tetracene-derived organic wires become encapsulated by GO sheets during the reaction to produce an interconnected, one-dimensional/two-dimensional lamellar film. Memory devices fabricated using the hybrid film as the sandwiched layer between aluminum electrodes exhibit excellent electrical bistability. The charge retention properties are attributed to charge transfer and a charge-trapping/detrapping mechanism operational at the interfaces and isolated matrices of the GO-tetracene hybrid. A simple method to synthesize hybrid materials containing 1D organic wires and 2D graphene oxide (GO) consists of sonicating tetracene and GO together in diluted fuming HNO 3. The GO-organic wire hybrids are used to fabricate memory devices that exhibit electrical bistability. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 19, 2018
WEB OF SCIENCETM
checked on Sep 10, 2018
checked on Aug 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.