Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4740455
Title: Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO 3 buffer layer
Authors: Wang, Y.-Z.
Cao, L.
Qi, D.-C. 
Chen, W. 
Wee, A.T.S. 
Gao, X.-Y. 
Issue Date: Aug-2012
Source: Wang, Y.-Z., Cao, L., Qi, D.-C., Chen, W., Wee, A.T.S., Gao, X.-Y. (2012-08). Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO 3 buffer layer. Journal of Applied Physics 112 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4740455
Abstract: We demonstrate that the interfacial hole injection barrier Δ h between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO 3 buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO 3 buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of Δ h is shown to be independent of the thickness of MoO 3 interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO 3 buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/95360
ISSN: 00218979
DOI: 10.1063/1.4740455
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