Please use this identifier to cite or link to this item: https://doi.org/10.1021/cm901127r
Title: Surface structure and electronic properties of in2O3(111) single-crystal thin films grown on Y-stabilized zrO2(111)
Authors: Zhang, K.H.L.
Payne, D.J.
Palgrave, R.G.
Lazarov, V.K.
Chen, W. 
Wee, A.T.S. 
McConville, C.F.
King, P.D.C.
Veal, T.D.
Panaccione, G.
Lacovig, P.
Egdell, R.G.
Issue Date: 13-Oct-2009
Source: Zhang, K.H.L., Payne, D.J., Palgrave, R.G., Lazarov, V.K., Chen, W., Wee, A.T.S., McConville, C.F., King, P.D.C., Veal, T.D., Panaccione, G., Lacovig, P., Egdell, R.G. (2009-10-13). Surface structure and electronic properties of in2O3(111) single-crystal thin films grown on Y-stabilized zrO2(111). Chemistry of Materials 21 (19) : 4353-4355. ScholarBank@NUS Repository. https://doi.org/10.1021/cm901127r
Abstract: Surface structure and electronic properties of In20 3(111) single-crystal thin films grown on V-stabilized Zr0 2(1 11) was observed. The surface geometrical structure was examined by atomic force microscopy (AFM), scanning tunneling microscope (STM) and low electron energy diffraction (LEED). The surface structure, however, provides in turn the essential basis for understanding the surface electronic properties such as the band offset, which plays an important role in determining the potential performance and stability of devices. The examination of valence band and conduction band spectra by HXPS adds further weight to the conclusion that the electron accumulation at the surface is an intrinsic property of In 2O3.
Source Title: Chemistry of Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/94984
ISSN: 08974756
DOI: 10.1021/cm901127r
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