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|Title:||Study of negative-bias temperature-instability-induced defects using first-principle approach|
|Citation:||Soon, J.M., Loh, K.P., Tan, S.S., Chen, T.P., Teo, W.Y., Chan, L. (2003-10-13). Study of negative-bias temperature-instability-induced defects using first-principle approach. Applied Physics Letters 83 (15) : 3063-3065. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1614415|
|Abstract:||A study was performed on negative-bias temperature-instability (NBTI)-induced defects. It was found that the NBTI effect lead to an overall decrease in frontier molecular orbital energy gap at the interface. The results showed that upon formation of a defect, an energy state was created inside the band gap of SiO2.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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