Study of negative-bias temperature-instability-induced defects using first-principle approach

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1614415

Title:	Study of negative-bias temperature-instability-induced defects using first-principle approach
Authors:	Soon, J.M. Loh, K.P. Tan, S.S. Chen, T.P. Teo, W.Y. Chan, L.
Issue Date:	13-Oct-2003
Citation:	Soon, J.M., Loh, K.P., Tan, S.S., Chen, T.P., Teo, W.Y., Chan, L. (2003-10-13). Study of negative-bias temperature-instability-induced defects using first-principle approach. Applied Physics Letters 83 (15) : 3063-3065. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1614415
Abstract:	A study was performed on negative-bias temperature-instability (NBTI)-induced defects. It was found that the NBTI effect lead to an overall decrease in frontier molecular orbital energy gap at the interface. The results showed that upon formation of a defect, an energy state was created inside the band gap of SiO2.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/94932
ISSN:	00036951
DOI:	10.1063/1.1614415
Appears in Collections:	Staff Publications

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