Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1614415
Title: Study of negative-bias temperature-instability-induced defects using first-principle approach
Authors: Soon, J.M.
Loh, K.P. 
Tan, S.S.
Chen, T.P.
Teo, W.Y.
Chan, L.
Issue Date: 13-Oct-2003
Citation: Soon, J.M., Loh, K.P., Tan, S.S., Chen, T.P., Teo, W.Y., Chan, L. (2003-10-13). Study of negative-bias temperature-instability-induced defects using first-principle approach. Applied Physics Letters 83 (15) : 3063-3065. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1614415
Abstract: A study was performed on negative-bias temperature-instability (NBTI)-induced defects. It was found that the NBTI effect lead to an overall decrease in frontier molecular orbital energy gap at the interface. The results showed that upon formation of a defect, an energy state was created inside the band gap of SiO2.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94932
ISSN: 00036951
DOI: 10.1063/1.1614415
Appears in Collections:Staff Publications

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