Please use this identifier to cite or link to this item:
https://doi.org/10.1002/asia.201300895
DC Field | Value | |
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dc.title | Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors | |
dc.contributor.author | Shao, J. | |
dc.contributor.author | Chang, J. | |
dc.contributor.author | Chi, C. | |
dc.date.accessioned | 2014-10-16T08:40:44Z | |
dc.date.available | 2014-10-16T08:40:44Z | |
dc.date.issued | 2014-01 | |
dc.identifier.citation | Shao, J., Chang, J., Chi, C. (2014-01). Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors. Chemistry - An Asian Journal 9 (1) : 253-260. ScholarBank@NUS Repository. https://doi.org/10.1002/asia.201300895 | |
dc.identifier.issn | 18614728 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/94844 | |
dc.description.abstract | A series of unsymmetrical naphthalene imide derivatives (1-5) with high electron affinity was synthesized and used in n-channel organic field-effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low-lying LUMO energy levels from -3.90 to -4.15 eV owing to a strong electron-withdrawing character. Solution-processed thin-film OFETs based on 1-4 were measured in both N2 and air. They all showed n-type FET behavior. The liquid-crystalline compounds 1 a, 1 b, and 3 showed good performance owing to the self-healing properties of the film in the liquid-crystal phase. Compound 3 has an electron mobility of up to 0.016 cm 2 V-1 s-1 and current on/off ratios of 10 4-105.Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/asia.201300895 | |
dc.source | Scopus | |
dc.subject | electrochemistry | |
dc.subject | naphthalene imides | |
dc.subject | photophysics | |
dc.subject | semiconductors | |
dc.subject | thin films | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1002/asia.201300895 | |
dc.description.sourcetitle | Chemistry - An Asian Journal | |
dc.description.volume | 9 | |
dc.description.issue | 1 | |
dc.description.page | 253-260 | |
dc.description.coden | CAAJB | |
dc.identifier.isiut | 000328501400036 | |
Appears in Collections: | Staff Publications |
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