Please use this identifier to cite or link to this item: https://doi.org/10.1002/asia.201300895
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dc.titleSolution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors
dc.contributor.authorShao, J.
dc.contributor.authorChang, J.
dc.contributor.authorChi, C.
dc.date.accessioned2014-10-16T08:40:44Z
dc.date.available2014-10-16T08:40:44Z
dc.date.issued2014-01
dc.identifier.citationShao, J., Chang, J., Chi, C. (2014-01). Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors. Chemistry - An Asian Journal 9 (1) : 253-260. ScholarBank@NUS Repository. https://doi.org/10.1002/asia.201300895
dc.identifier.issn18614728
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94844
dc.description.abstractA series of unsymmetrical naphthalene imide derivatives (1-5) with high electron affinity was synthesized and used in n-channel organic field-effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low-lying LUMO energy levels from -3.90 to -4.15 eV owing to a strong electron-withdrawing character. Solution-processed thin-film OFETs based on 1-4 were measured in both N2 and air. They all showed n-type FET behavior. The liquid-crystalline compounds 1 a, 1 b, and 3 showed good performance owing to the self-healing properties of the film in the liquid-crystal phase. Compound 3 has an electron mobility of up to 0.016 cm 2 V-1 s-1 and current on/off ratios of 10 4-105.Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/asia.201300895
dc.sourceScopus
dc.subjectelectrochemistry
dc.subjectnaphthalene imides
dc.subjectphotophysics
dc.subjectsemiconductors
dc.subjectthin films
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1002/asia.201300895
dc.description.sourcetitleChemistry - An Asian Journal
dc.description.volume9
dc.description.issue1
dc.description.page253-260
dc.description.codenCAAJB
dc.identifier.isiut000328501400036
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