Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn202910t
Title: Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source
Authors: Wong, S.L.
Huang, H. 
Wang, Y.
Cao, L.
Qi, D. 
Santoso, I. 
Chen, W. 
Wee, A.T.S. 
Keywords: electronic structure
fluorine intercalation
nanostructures
quasi-free-standing grapheme
scanning tunneling microscopy and spectroscopy
silicon carbide
Issue Date: 27-Sep-2011
Citation: Wong, S.L., Huang, H., Wang, Y., Cao, L., Qi, D., Santoso, I., Chen, W., Wee, A.T.S. (2011-09-27). Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source. ACS Nano 5 (9) : 7662-7668. ScholarBank@NUS Repository. https://doi.org/10.1021/nn202910t
Abstract: We demonstrated a novel method to obtain charge neutral quasi-free-standing graphene on SiC (0001) from the buffer layer using fluorine from a molecular source, fluorinated fullerene (C60F48). The intercalated product is stable under ambient conditions and resistant to elevated temperatures of up to 1200 °C. Scanning tunneling microscopy and spectroscopy measurements are performed for the first time on such quasi-free-standing graphene to elucidate changes in the electronic and structural properties of both the graphene and interfacial layer. Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated. Photoemission spectroscopy is used to confirm these electronic and structural changes. © 2011 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/94646
ISSN: 19360851
DOI: 10.1021/nn202910t
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