Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4734502
Title: Polarization effects on energy-level alignment at the interfaces of polymer organic semiconductor films
Authors: Zhao, L.-H.
Png, R.-Q. 
Chiam, C.C.H.
Guo, H.
Zhuo, J.-M. 
Chua, L.-L. 
Wee, A.T.S. 
Ho, P.K.H. 
Issue Date: 30-Jul-2012
Source: Zhao, L.-H., Png, R.-Q., Chiam, C.C.H., Guo, H., Zhuo, J.-M., Chua, L.-L., Wee, A.T.S., Ho, P.K.H. (2012-07-30). Polarization effects on energy-level alignment at the interfaces of polymer organic semiconductor films. Applied Physics Letters 101 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4734502
Abstract: The thickness-dependent evolutions of the Fermi level E F and ionization potential I p of ultrathin films of regioregular poly(3-hexylthiophene) and poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b] thiophene], deposited as edge-on π-stacked lamellae on gold and on p-doped poly(3,4-ethylenedioxythiophene) electrodes, have been measured by ultraviolet photoemission spectroscopy. The I p increases by 0.3 eV on going from a monolayer film to a few-nanometer-thick film. Correspondingly, the E F pinning depth increases from 0.2 eV to 0.5 eV. This valence band bending which occurs for a constant vacuum level can be quantitatively modeled by microelectrostatic self-consistent polarization field calculations that incorporate both substrate and organic semiconductor film effects. The E F pinning to the first monolayer is relatively shallow. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94545
ISSN: 00036951
DOI: 10.1063/1.4734502
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