Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4818463
Title: Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers
Authors: Lin, J.
Zhong, J.
Zhong, S.
Li, H.
Zhang, H.
Chen, W. 
Issue Date: 5-Aug-2013
Citation: Lin, J., Zhong, J., Zhong, S., Li, H., Zhang, H., Chen, W. (2013-08-05). Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers. Applied Physics Letters 103 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4818463
Abstract: In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C60 decoration keeps MoS 2 FET performance intact due to the very weak interfacial interactions, making C60 as an ideal capping layer for MoS 2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94294
ISSN: 00036951
DOI: 10.1063/1.4818463
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

51
checked on Jul 9, 2018

WEB OF SCIENCETM
Citations

50
checked on Jun 20, 2018

Page view(s)

52
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.