Please use this identifier to cite or link to this item:
|Title:||Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers|
|Citation:||Lin, J., Zhong, J., Zhong, S., Li, H., Zhang, H., Chen, W. (2013-08-05). Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers. Applied Physics Letters 103 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4818463|
|Abstract:||In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C60 decoration keeps MoS 2 FET performance intact due to the very weak interfacial interactions, making C60 as an ideal capping layer for MoS 2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices. © 2013 AIP Publishing LLC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 5, 2018
WEB OF SCIENCETM
checked on Nov 27, 2018
checked on Nov 23, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.