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Title: Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers
Authors: Lin, J.
Zhong, J.
Zhong, S.
Li, H.
Zhang, H.
Chen, W. 
Issue Date: 5-Aug-2013
Citation: Lin, J., Zhong, J., Zhong, S., Li, H., Zhang, H., Chen, W. (2013-08-05). Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers. Applied Physics Letters 103 (6) : -. ScholarBank@NUS Repository.
Abstract: In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C60 decoration keeps MoS 2 FET performance intact due to the very weak interfacial interactions, making C60 as an ideal capping layer for MoS 2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.4818463
Appears in Collections:Staff Publications

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