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Title: Low-temperature, bottom-up synthesis of graphene via a radical-coupling reaction
Authors: Jiang, L.
Niu, T.
Lu, X.
Dong, H.
Chen, W. 
Liu, Y.
Hu, W.
Zhu, D.
Issue Date: 19-Jun-2013
Citation: Jiang, L., Niu, T., Lu, X., Dong, H., Chen, W., Liu, Y., Hu, W., Zhu, D. (2013-06-19). Low-temperature, bottom-up synthesis of graphene via a radical-coupling reaction. Journal of the American Chemical Society 135 (24) : 9050-9054. ScholarBank@NUS Repository.
Abstract: In this article, we demonstrated a method to synthesize graphene films at low temperature via a mild radical-coupling reaction. During the deposition process, with the effectively breaking of the C-Br bonds of hexabromobenzene (HBB) precursors, the generated HBB radicals couple efficiently to form graphene films at the low temperature of 220-250 C. In situ low-temperature scanning tunneling microscopy was used to provide atomic scale investigation of the graphene growth mechanism using HBB as precursor. The chemical structure evolution during the graphene growth process was further corroborated by in situ X-ray photoelectron spectroscopy measurements. The charge carrier mobility of the graphene film grown at low temperature is at 1000-4200 cm2 V -1s-1, as evaluated in a field-effect transistor device configuration on SiO2 substrates, indicating the high quality of the films. © 2013 American Chemical Society.
Source Title: Journal of the American Chemical Society
ISSN: 00027863
DOI: 10.1021/ja4031825
Appears in Collections:Staff Publications

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