Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1593211
Title: Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability
Authors: Tan, S.S.
Chen, T.P.
Soon, J.M.
Loh, K.P. 
Ang, C.H.
Teo, W.Y.
Chan, L.
Issue Date: 21-Jul-2003
Source: Tan, S.S., Chen, T.P., Soon, J.M., Loh, K.P., Ang, C.H., Teo, W.Y., Chan, L. (2003-07-21). Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability. Applied Physics Letters 83 (3) : 530-532. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1593211
Abstract: A first-principles calculation was reported which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). It was shown that nitrogen's lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex was formed and weakening of bond strength was observed at trapping site.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94158
ISSN: 00036951
DOI: 10.1063/1.1593211
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