Please use this identifier to cite or link to this item:
|Title:||Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability|
|Citation:||Tan, S.S., Chen, T.P., Soon, J.M., Loh, K.P., Ang, C.H., Teo, W.Y., Chan, L. (2003-07-21). Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability. Applied Physics Letters 83 (3) : 530-532. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1593211|
|Abstract:||A first-principles calculation was reported which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). It was shown that nitrogen's lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex was formed and weakening of bond strength was observed at trapping site.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 16, 2018
WEB OF SCIENCETM
checked on May 22, 2018
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.