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|Title:||Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability|
|Citation:||Tan, S.S., Chen, T.P., Soon, J.M., Loh, K.P., Ang, C.H., Teo, W.Y., Chan, L. (2003-07-21). Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability. Applied Physics Letters 83 (3) : 530-532. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1593211|
|Abstract:||A first-principles calculation was reported which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). It was shown that nitrogen's lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, a positive charge complex was formed and weakening of bond strength was observed at trapping site.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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