Please use this identifier to cite or link to this item: https://doi.org/10.1039/b511981b
Title: La2S3 thin films from metal organic chemical vapor deposition of single-source precursor
Authors: Tian, L. 
Ouyang, T.
Loh, K.P. 
Vittal, J.J. 
Issue Date: 2006
Citation: Tian, L., Ouyang, T., Loh, K.P., Vittal, J.J. (2006). La2S3 thin films from metal organic chemical vapor deposition of single-source precursor. Journal of Materials Chemistry 16 (3) : 272-277. ScholarBank@NUS Repository. https://doi.org/10.1039/b511981b
Abstract: Thin films of lanthanum sulfide (La2S3) have been prepared from [La(bipy)(S2CNEt2)3] by using metal organic chemical vapor deposition (MOCVD) on different substrates. The preparative parameters, such as substrate temperature and the nature of substrates, are optimized to get well-defined cubic phase (γ) lanthanum sulfide thin films. The optimized films are characterized by means of X-ray powder diffraction (XRPD) techniques, scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and in-situ X-ray photoelectron spectroscopy (XPS). © the Royal Society of Chemistry 2006.
Source Title: Journal of Materials Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/94128
ISSN: 09599428
DOI: 10.1039/b511981b
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