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|Title:||La2S3 thin films from metal organic chemical vapor deposition of single-source precursor|
|Authors:||Tian, L. |
|Citation:||Tian, L., Ouyang, T., Loh, K.P., Vittal, J.J. (2006). La2S3 thin films from metal organic chemical vapor deposition of single-source precursor. Journal of Materials Chemistry 16 (3) : 272-277. ScholarBank@NUS Repository. https://doi.org/10.1039/b511981b|
|Abstract:||Thin films of lanthanum sulfide (La2S3) have been prepared from [La(bipy)(S2CNEt2)3] by using metal organic chemical vapor deposition (MOCVD) on different substrates. The preparative parameters, such as substrate temperature and the nature of substrates, are optimized to get well-defined cubic phase (γ) lanthanum sulfide thin films. The optimized films are characterized by means of X-ray powder diffraction (XRPD) techniques, scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and in-situ X-ray photoelectron spectroscopy (XPS). © the Royal Society of Chemistry 2006.|
|Source Title:||Journal of Materials Chemistry|
|Appears in Collections:||Staff Publications|
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