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|Title:||Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface|
|Authors:||Zhang, Y.P. |
Scanning tunneling microscopy
|Citation:||Zhang, Y.P., Yong, K.S., Xu, G.Q., Gao, X.Y., Wang, X.-S., Wee, A.T.S. (2011-01-01). Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface. Applied Surface Science 257 (6) : 2038-2041. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2010.09.048|
|Abstract:||The adsorption of S2 on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms Sn species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuSx nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface. © 2010 Elsevier B.V. All rights reserved.|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
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