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|Title:||In situ UPS study of the formation of FeSi films from cis-Fe(SiCl 3)2(CO)4|
|Authors:||Huang, W. |
|Citation:||Huang, W.,Zybill, C.E.,Luo, L.,Hieringer, W.,Huang, H.H. (1998-12-21). In situ UPS study of the formation of FeSi films from cis-Fe(SiCl 3)2(CO)4. Organometallics 17 (26) : 5825-5829. ScholarBank@NUS Repository.|
|Abstract:||The chemical vapor deposition (CVD) reaction of cis-Fe(SiCl 3)2(CO)4 to form iron silicide, FeSi, has been investigated by in situ photoelectron (PE) spectroscopy in the surface-controlled regime up to 600°C. The experimental data provide evidence for SiCl4 elimination. The reaction is assumed to occur at the surface via adsorbed silylene complex intermediates. A density functional theory (DFT) calculation approximated for the gas phase shows the elimination of SiCl4 to be endothermic by 15.0 kcal mol-1. The mechanism considered in the calculations involves Cl transfer from Si1 to Si2 of cis-Fe(SiCl3)2(CO)4 accompanied by Fe-Si2 bond fission and formation of [Fe(=SiCl2)(CO)4] (calculated energy of activation 47 kcal mol-1, Fe=Si bond dissociation energy 52 kcal mol-1). © 1998 American Chemical Society.|
|Appears in Collections:||Staff Publications|
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