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Title: In situ UPS study of the formation of FeSi films from cis-Fe(SiCl 3)2(CO)4
Authors: Huang, W. 
Zybill, C.E.
Luo, L.
Hieringer, W.
Huang, H.H. 
Issue Date: 21-Dec-1998
Citation: Huang, W.,Zybill, C.E.,Luo, L.,Hieringer, W.,Huang, H.H. (1998-12-21). In situ UPS study of the formation of FeSi films from cis-Fe(SiCl 3)2(CO)4. Organometallics 17 (26) : 5825-5829. ScholarBank@NUS Repository.
Abstract: The chemical vapor deposition (CVD) reaction of cis-Fe(SiCl 3)2(CO)4 to form iron silicide, FeSi, has been investigated by in situ photoelectron (PE) spectroscopy in the surface-controlled regime up to 600°C. The experimental data provide evidence for SiCl4 elimination. The reaction is assumed to occur at the surface via adsorbed silylene complex intermediates. A density functional theory (DFT) calculation approximated for the gas phase shows the elimination of SiCl4 to be endothermic by 15.0 kcal mol-1. The mechanism considered in the calculations involves Cl transfer from Si1 to Si2 of cis-Fe(SiCl3)2(CO)4 accompanied by Fe-Si2 bond fission and formation of [Fe(=SiCl2)(CO)4] (calculated energy of activation 47 kcal mol-1, Fe=Si bond dissociation energy 52 kcal mol-1). © 1998 American Chemical Society.
Source Title: Organometallics
ISSN: 02767333
Appears in Collections:Staff Publications

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