Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3327834
Title: In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
Authors: Chen, Q.
Huang, H. 
Chen, W. 
Wee, A.T.S. 
Feng, Y.P. 
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
Issue Date: 2010
Source: Chen, Q., Huang, H., Chen, W., Wee, A.T.S., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010). In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters 96 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3327834
Abstract: High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2 /graphene/4H-SiC heterojunctions have good thermal stability up to 650 °C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high- k dielectric grown on graphene is very promising for the development of graphene-based electronic devices. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94020
ISSN: 00036951
DOI: 10.1063/1.3327834
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