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|Title:||In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate|
|Citation:||Chen, Q., Huang, H., Chen, W., Wee, A.T.S., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010). In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters 96 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3327834|
|Abstract:||High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2 /graphene/4H-SiC heterojunctions have good thermal stability up to 650 °C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high- k dielectric grown on graphene is very promising for the development of graphene-based electronic devices. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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