Please use this identifier to cite or link to this item:
|Title:||In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate|
|Citation:||Chen, Q., Huang, H., Chen, W., Wee, A.T.S., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010). In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters 96 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3327834|
|Abstract:||High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2 /graphene/4H-SiC heterojunctions have good thermal stability up to 650 °C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high- k dielectric grown on graphene is very promising for the development of graphene-based electronic devices. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 18, 2019
WEB OF SCIENCETM
checked on Mar 11, 2019
checked on Mar 23, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.