Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4860418
Title: Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study
Authors: Han, C.
Lin, J.
Xiang, D.
Wang, C.
Wang, L.
Chen, W. 
Issue Date: 23-Dec-2013
Source: Han, C., Lin, J., Xiang, D., Wang, C., Wang, L., Chen, W. (2013-12-23). Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study. Applied Physics Letters 103 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4860418
Abstract: By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO3) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO3, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94012
ISSN: 00036951
DOI: 10.1063/1.4860418
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