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|Title:||Improvement on lithography pattern profile by plasma treatment|
|Citation:||Soo, C.P.,Bourdillon, A.J.,Valiyaveettil, S.,Huan, A.,Wee, A.,Fan, M.H.,Ang, T.C.,Chan, L.H. (1999-07). Improvement on lithography pattern profile by plasma treatment. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17 (4) : 1526-1530. ScholarBank@NUS Repository.|
|Abstract:||New chemical information has been obtained which explains "footing" and "bottom pinching" effects in chemically amplified (CA) resists on a silicon nitride surface. X-ray photoelectron spectroscopy measurements indicate that the residual alkaline molecules on the nitride surface play a major role in the formation of nitride footing. It appears that the organic contaminants are not responsible for nitride footing. O2 and N2O/SiH4 plasma treatment are used to modify the silicon nitride surface. Less severe footing is observed if the nitride surface is treated with N2O/SiH4 plasma. This is attributed to the deposition of a thin oxide cap on the nitride substrate, which suppresses the surface basicity. However, extended N2O plasma treatment causes resist bottom pinching. This is ascribed to the surface acidity of a newly formed oxide cap which enhances the CA resist development process. Results show that the N (1s) peak, after extended N2O/SiH4 plasma treatment, has shifted to a higher binding state which suggests that the nitride surface becomes acidic, causing bottom pinching. © 1999 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Appears in Collections:||Staff Publications|
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