Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/92/27001
Title: Graphene transport at high carrier densities using a polymer electrolyte gate
Authors: Pachoud, A.
Jaiswal, M. 
Ang, P.K. 
Loh, K.P. 
Özyilmaz, B. 
Issue Date: Oct-2010
Citation: Pachoud, A., Jaiswal, M., Ang, P.K., Loh, K.P., Özyilmaz, B. (2010-10). Graphene transport at high carrier densities using a polymer electrolyte gate. EPL 92 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/92/27001
Abstract: We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 × 1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 × 1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 × 1013/cm2 , whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate. Copyright © EPLA, 2010.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/93898
ISSN: 02955075
DOI: 10.1209/0295-5075/92/27001
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