Please use this identifier to cite or link to this item: https://doi.org/10.1021/om400028n
Title: Enhanced emission and analyte sensing by cinchonine iridium(III) cyclometalated complexes bearing bent diphosphine chelators
Authors: Luo, S.-X.
Wei, L.
Zhang, X.-H.
Lim, M.H.
Lin, K.X.V.
Yeo, M.H.V.
Zhang, W.-H.
Liu, Z.-P.
Young, D.J.
Hor, T.S.A. 
Issue Date: 24-May-2013
Citation: Luo, S.-X., Wei, L., Zhang, X.-H., Lim, M.H., Lin, K.X.V., Yeo, M.H.V., Zhang, W.-H., Liu, Z.-P., Young, D.J., Hor, T.S.A. (2013-05-24). Enhanced emission and analyte sensing by cinchonine iridium(III) cyclometalated complexes bearing bent diphosphine chelators. Organometallics 32 (10) : 2908-2917. ScholarBank@NUS Repository. https://doi.org/10.1021/om400028n
Abstract: Ir(III) complexes of cyclometalating ligands derived from the natural product cinchonine and bent (4,6-bis(diphenylphosphino)phenoxazine (Nixantphos), 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene (Xantphos)) and planar diphosphine ligands (1,2-bis(diphenylphosphino)benzene (dppb)) exhibit good luminescence with quantum efficiencies higher than those of their parent congeners. Steric hindrance by both the bulky cinchonine-derived ligand and bent diphosphine could limit nonradiative energy transfer. The cinchonine-derived and parent complexes cover a broad emission range from 472 to 569 nm with quantum efficiencies up to 0.38 and lifetimes from 0.01 to 0.46 μs in degassed CH2Cl2 solution at room temperature. DFT calculations on selected examples are in good agreement with solid-state structures determined crystallographically and accurately predict wavelengths of emission by excited electron decay from a quinoline-centered orbital to an Ir 5d-phenyl molecular orbital. The complex [(pcn)2Ir(Nixantphos)] [PF6] (2; pcn = 2′-phenyl-9-O-benzyl-10,11-dihydrocinchonine- C2,N) exhibits the highest quantum yield and could detect electron-deficient aromatic species at ppm levels. © 2013 American Chemical Society.
Source Title: Organometallics
URI: http://scholarbank.nus.edu.sg/handle/10635/93756
ISSN: 02767333
DOI: 10.1021/om400028n
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