Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep04431
Title: Elementary process for CVD graphene on Cu(110): Size-selective carbon clusters
Authors: Zhang, J.
Wang, Z.
Niu, T.
Wang, S.
Li, Z.
Chen, W. 
Issue Date: 21-Mar-2014
Source: Zhang, J., Wang, Z., Niu, T., Wang, S., Li, Z., Chen, W. (2014-03-21). Elementary process for CVD graphene on Cu(110): Size-selective carbon clusters. Scientific Reports 4 : -. ScholarBank@NUS Repository. https://doi.org/10.1038/srep04431
Abstract: Revealing the graphene growth mechanism at the atomic-scale is of great importance for achieving high quality graphene. However, the lack of direct experimental observation and density functional theory (DFT) verification hinders a comprehensive understanding of the structure of the carbon clusters and evolution of the graphene growth on surface. Here, we report an in-situ low-temperature scanning tunneling microscopy (LT-STM) study of the elementary process of chemical vapor deposition (CVD) graphene growth via thermal decomposition of methane on Cu(110), including the formation of monodispersed carbon clusters at the initial stage, the graphene nucleation and the ripening of graphene islands to form continuous graphene film. STM measurement, supported by DFT calculations, suggests that the carbon clusters on the surface are C2 H5. It is found that graphene layers can be joined by different domains, with a relative misorientation of 30°. These graphene layers can be decoupled from Cu(110) through low temperature thermal cycling.
Source Title: Scientific Reports
URI: http://scholarbank.nus.edu.sg/handle/10635/93730
ISSN: 20452322
DOI: 10.1038/srep04431
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