Please use this identifier to cite or link to this item:
|Title:||Elementary process for CVD graphene on Cu(110): Size-selective carbon clusters|
|Citation:||Zhang, J., Wang, Z., Niu, T., Wang, S., Li, Z., Chen, W. (2014-03-21). Elementary process for CVD graphene on Cu(110): Size-selective carbon clusters. Scientific Reports 4 : -. ScholarBank@NUS Repository. https://doi.org/10.1038/srep04431|
|Abstract:||Revealing the graphene growth mechanism at the atomic-scale is of great importance for achieving high quality graphene. However, the lack of direct experimental observation and density functional theory (DFT) verification hinders a comprehensive understanding of the structure of the carbon clusters and evolution of the graphene growth on surface. Here, we report an in-situ low-temperature scanning tunneling microscopy (LT-STM) study of the elementary process of chemical vapor deposition (CVD) graphene growth via thermal decomposition of methane on Cu(110), including the formation of monodispersed carbon clusters at the initial stage, the graphene nucleation and the ripening of graphene islands to form continuous graphene film. STM measurement, supported by DFT calculations, suggests that the carbon clusters on the surface are C2 H5. It is found that graphene layers can be joined by different domains, with a relative misorientation of 30°. These graphene layers can be decoupled from Cu(110) through low temperature thermal cycling.|
|Source Title:||Scientific Reports|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.