Please use this identifier to cite or link to this item:
Title: Efficient growth of ordered thin oxide films on Ni (1 1 1) by NO 2 oxidation
Authors: Yeo, B.S. 
Chen, Z.H.
Sim, W.S. 
Keywords: Auger electron spectroscopy
Infrared absorption spectroscopy
Low energy electron diffraction (LEED)
Low index single crystal surfaces
Nickel oxides
Nitrogen oxides
Issue Date: 20-May-2004
Source: Yeo, B.S., Chen, Z.H., Sim, W.S. (2004-05-20). Efficient growth of ordered thin oxide films on Ni (1 1 1) by NO 2 oxidation. Surface Science 557 (1-3) : 201-207. ScholarBank@NUS Repository.
Abstract: The efficient growth of ordered thin oxide films on Ni(1 1 1) using low NO2 gas exposures under ultrahigh vacuum conditions has been achieved. The reaction mechanism of NO2 on Ni(1 1 1) at 500-600 K changes from total decomposition to partial dissociation into NO and O after a critical surface adatom coverage has been attained. Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) reveal the creation of an intermediate NiO(1 0 0) phase, followed by the eventual formation of clean NiO(1 1 1) overlayers. Reflection absorption infrared spectroscopy (RAIRS) using CO molecules as probes of the surface adsorption sites present confirms the conversion of Ni0 to Ni2+ during the oxidation process. © 2004 Elsevier B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/j.susc.2004.03.052
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 8, 2018


checked on Feb 7, 2018

Page view(s)

checked on Mar 12, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.