Please use this identifier to cite or link to this item: https://doi.org/10.1002/anie.201309506
Title: Dependency of the tunneling decay coefficient in molecular tunneling junctions on the topography of the bottom electrodes
Authors: Yuan, L.
Jiang, L.
Zhang, B.
Nijhuis, C.A. 
Keywords: bottom electrodes
charge transport
molecular electronics
self-assembled monolayers
tunneling decay constant
Issue Date: 24-Mar-2014
Source: Yuan, L., Jiang, L., Zhang, B., Nijhuis, C.A. (2014-03-24). Dependency of the tunneling decay coefficient in molecular tunneling junctions on the topography of the bottom electrodes. Angewandte Chemie - International Edition 53 (13) : 3377-3381. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201309506
Abstract: A controversy in molecular electronics is the unexplained large spread in values of the tunneling decay coefficient β in tunneling junctions with self-assembled monolayers of n-alkanethiolates (SCn). We show control of the β value over the range 0.4-1.0 nC -1 in junctions by changing the topography of the bottom electrodes that support the SAMs. Very low β values (0.4-0.5 nC -1) are obtained for rough surfaces with large areas of exposed grain boundaries, while β=1.0 nC -1 for smooth surfaces with small areas of exposed grain boundaries. Taking the rough with the smooth: The tunneling decay coefficient β in tunneling junctions with self-assembled n-alkanethiolate monolayers can be controlled by changing the topography of the bottom electrodes. Rough surfaces with large areas of exposed grain boundaries give β=0.4-0.5 nC -1, while smooth surfaces with small areas of exposed grain boundaries give β=1.0 nC -1 (see picture). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Angewandte Chemie - International Edition
URI: http://scholarbank.nus.edu.sg/handle/10635/93530
ISSN: 15213773
DOI: 10.1002/anie.201309506
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