Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/93512
Title: Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface
Authors: Cao, Y.
Yong, K.S.
Wang, Z.H.
Deng, J.F.
Lai, Y.H. 
Xu, G.Q. 
Issue Date: 15-Aug-2001
Citation: Cao, Y., Yong, K.S., Wang, Z.H., Deng, J.F., Lai, Y.H., Xu, G.Q. (2001-08-15). Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface. Journal of Chemical Physics 115 (7) : 3287-3296. ScholarBank@NUS Repository.
Abstract: Cycloaddition reactions of the heterocyclic thiophene molecule on silicon surface was studied. The binding configuration, thermal stability and absorption sites of thiophene molecules on silicon were obtained using a combination of thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM) and semiempirical calculations. Covalent binding of thiophene molecules onto the silicon surface was readily achieved by vacuum vapor adsorption. Preferential chemisorption of thiophene molecules on the faulted subunits and the center adatoms was also observed.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/93512
ISSN: 00219606
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

35
checked on Feb 28, 2018

WEB OF SCIENCETM
Citations

31
checked on Apr 24, 2018

Page view(s)

25
checked on May 25, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.