Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.201301267
Title: Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system
Authors: Chang, J.
Chi, C. 
Zhang, J.
Wu, J. 
Keywords: crystal anisotropy
mixed solvent systems
organic single-crystalline transistors
slot-die coating
Issue Date: 26-Nov-2013
Citation: Chang, J., Chi, C., Zhang, J., Wu, J. (2013-11-26). Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system. Advanced Materials 25 (44) : 6442-6447. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201301267
Abstract: A slot-die coating technique is used for the crystal alignment of triisopropylsilylethynyl (TIPS)-pentacene in solution-processed field-effect transistors (FETs). The film thickness, uniformity, and crystal growth behavior are well controlled by tuning the coating parameters and by using a mixed solvent system (toluene/anisole). An average saturation regime FET mobility of 1.8 cm2 V-1 s-1 is achieved under ambient conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/93367
ISSN: 09359648
DOI: 10.1002/adma.201301267
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