Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0009-2614(02)01793-1
Title: Characterization of SiN and other transient species in a silicon tetrachloride-nitrogen discharge
Authors: Li, P.
Fan, W.Y. 
Issue Date: 10-Jan-2003
Source: Li, P., Fan, W.Y. (2003-01-10). Characterization of SiN and other transient species in a silicon tetrachloride-nitrogen discharge. Chemical Physics Letters 367 (5-6) : 645-650. ScholarBank@NUS Repository. https://doi.org/10.1016/S0009-2614(02)01793-1
Abstract: Infrared diode laser absorption spectroscopy has been used to detect the A-X electronic spectrum of diatomic SiN in a SiCl4/N2 plasma. The intensity of the SiN transitions with respect to the ratio of SiCl4:N2 flow rate was investigated. A correlation between intense signals of SiN and the optimal growth conditions for a-SiN films reported in literature was found. This observation lends support to the importance of diatomic SiN as a film precursor. The electronic emission spectra of silicon-containing transient species were also recorded in the plasma. A brief discussion of the plasma reaction pathways of SiN is presented. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Chemical Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/93269
ISSN: 00092614
DOI: 10.1016/S0009-2614(02)01793-1
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